SBIR Phase II:A Novel Approach for Production of Freestanding GaN Wafers for III-Nitride Light Emitters and Detectors

Period of Performance: 01/01/2010 - 12/31/2010


Phase 2 SBIR

Recipient Firm

Fairfield Crystal Technology, LLC
8 South End Plaza
New Milford, CT 06776
Principal Investigator


This Small Business Innovation Research (SBIR) Phase II project is to demonstrate a novel technique for producing large-diameter freestanding GaN wafers and substrates. Despite the research efforts in the last decade, affordable GaN wafers and substrates of large diameters have not been widely available commercially, which hinders commercialization of high performance GaN-based devices. This Phase II project will demonstrate a unique approach to growth of GaN thick films and fabrication of freestanding GaN wafers and substrates with low densities of dislocations and low wafer bow/warp in an efficient manner. This Phase II research includes crystal growth of GaN thick films, fabrication of GaN wafers and substrates, and extensive characterization of GaN wafers. If this Phase II project is successful, high-quality freestanding GaN substrates of large diameters will become widely available commercially at an affordable price, which will enable volume production and commercialization of high-performance GaN-based light emitters and ultraviolet light detectors.