Monolithic 1.3-um VCSEL's Grown on Alternative Substrates

Period of Performance: 05/10/2000 - 11/10/2000


Phase 1 SBIR

Recipient Firm

Applied Optoelectronics, Inc.
242 Kingfisher Dr.
Sugar Land, TX 77478
Principal Investigator


We propose to develop monolithic high-power room-temperature 1.3-µm vertical cavity surface emitting lasers (VCSELs) using novel alternative substrate technology. Long wavelength (1.3-1.55 µm) VCSELs are the key device for future local area networks and interconnection systems in both commercial and military applications. The advantages of using VCSEL's include dynamic single mode operation, low packaging cost, on wafer test capability, higher achievable direct modulation speed and easiness of high-dimensional arrays. In this project, we propose to demonstrate high-performance monolithic 1.3-um VCSELs grown directly on alternative InGaAs/GaAs bonded substrates. Recently, we have demonstrated high-power 4-um Mid-IR type-II quantum-well (QW) lasers grown directly on InGaAs/GaAs alternative substrates. The lattice mismatch between the type-II QWs and GaAs substrate is as high as 8.5%. Excellent device performance results were achieved. After several days of high-power pumping condition, there is no observable degradations in the laser performance, which demonstrates the feasibility of alternative substrates. We have also demonstrated many high-performance photodetectors from 10 to 19 um directly grown on alternative substrates with no threading dislocation from cross section TEM. In this project, monolithic high-power room-temperature 1.3-um VCSELs and large high-quality alternative substrates will be developed. These will have a huge impact on the optical communication industry. The developed 2-inch GaAs on Si alternative substrates will create a revolution in the space solar cell industry. These alternative substrates can also be used for blue LEDs and lasers, Mid-IR photodetectors and lasers.