High Voltage Silicon Carbide Emitter Turn-off Thyristor

Period of Performance: 01/01/2007 - 12/31/2007

$99.4K

Phase 1 STTR

Recipient Firm

Solitronics Llc
2408 Chelmsford Court
Cary, NC 27518
Principal Investigator
Firm POC

Research Institution

North Carolina State University
Campus Box 7514
Raleigh, NC 27695
Institution POC

Abstract

Advanced SiC-based high-power switches are need for power conversion applications. This project will develop a 10 kV-18 kV class, high voltage, SiC Emitter Turn-off thyristor that maximizes the capability of SiC materials while minimizing the effect of immature material properties, such as poor oxide reliability and low surface mobility. The SiC ETO will result in the best performance in terms of speed and conduction capability, and will be superior to IGBT and MOSFET. The targeted device will have 10-15 kV breakdown voltage, 5 to 10 kHz switching capability, and 100 A current rating. In Phase I, a large current module will be developed, based on multichip module packaging. Commercial Applications and other Benefits as described by the awardee: The SiC thyristor-based switch should significantly increase the power-vs-frequency capability of power electronics technology. In turn, this product would reduce utility costs associated with energy loss during the lifetime of the power electronics equipment. The technology also should find use in DoD applications that require high power density, such as the power conversion system in a naval ship. In the commercial world, the technology should lead to superior semiconductor switch products, along with high-power electronics based on these switch products, thereby enhancing U.S. competitiveness in power semiconductors .