Modification of Semiconductors for Bandgap Engineering and Monolithic Integration of Optoelectronic Devices

Period of Performance: 05/12/2000 - 11/11/2000

$65K

Phase 1 SBIR

Recipient Firm

Altair Center, LLC
1 Chartwell Circle
Shrewsbury, MA 01545
Principal Investigator

Abstract

Altair Center proposes to develop a revolutionary new technology for room temperature selective modification of semiconductor materials adjusting bandgap, refractive index and quantum confined properties of the semiconductor structures already after their growth. The selective processing of the semiconductor materials employs a novel process assisted by illumination of the semiconductor with a laser beam at the fundamental absorption wavelength. The process of modification creates nanoclusters (quantum dots) in the semiconductor material dramatically changing its bandgap and electromagnetic properties. The proposed technology can be applied to many semiconductor-based devices. For some semiconductor materials (GaAs, CdS), the process has already demonstrated huge change in the refractive index (as large as 0.8-1). The large index change can be employed for fabrication and monolithic integration of a broad class of active or passive semiconductor-based components using simple direct laser beam writing. In Phase I the proposed technology will be demonstrated and developed in detail. In Phase II a prototype apparatus for processing various semiconductor materials will be fabricated with final product delivered to DoD. In addition to immediate military applications, the proposed technology is an excellent candidate for fabrication of different photonic products in several markets, including: diffractive gratings, computer generated holograms, spatial light modulators, diode lasers, photonic bandgap structures, thin film photovoltaic devices, etc.