Quantum Cascade Laser fabrication by Metal-Organic Chemical Vapor Deposition Growth Techniques for Mid-Infrared Spectral Range

Period of Performance: 04/06/2006 - 03/30/2007

$79.8K

Phase 1 SBIR

Recipient Firm

Archcom Technology, Inc.
1335 W. Foothill Blvd.
Azusa, CA 91702
Principal Investigator

Abstract

We propose to develop CW Quantum Cascade (QC) Lasers based on strain-balanced GaInAs/AlInAs/InP quantum well (QW) system using MOCVD growth techniques. We will design and fabricate lasers operate in the 4.5-4.8 ìm mid-IR wavelength region with high output power (>500 mW) at TE cooler temperature or room temperatures. Also, we will collaborate with Jet Propulsion Laboratory (JPL) to develop type-II interband cascade lasers as a second approach to achieve the objectivesBENEFITS: Successful developing high power CW mid-infrared light sources will significantly advance the fields such as chemical sensing, infrared countermeasure (IRCM), IR illumination, IR communications, laser surgery, industrial process control, and IR radar for aircraft and automobiles. Semiconductor mid-infrared light sources have considerable advantages in terms of cost, volume, weight, simplicity of design, reliability, and overall performance.