SBIR Phase II: Flux-Gated Spin-Dependent-Tunneling Sensors

Period of Performance: 01/01/2004 - 12/31/2004

$500K

Phase 2 SBIR

Recipient Firm

NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.
11409 Valley View Road
Eden Prairie, MN 55344
Principal Investigator
Firm POC

Abstract

This Small Business Innovation Research Phase II project seeks to fabricate a novel nanotechnology spin-dependent tunneling (SDT) magnetic field sensor device with increased signal-to-noise performance at low frequencies. The increased resolution at low frequencies is greatly desired in a large number of application markets. The proposed device is based on innovative methods of modulating the permeability of, and/or the flux through, integrated flux concentrators. These methods of "flux gating" (chopping or sweeping the magnetic field which is sensed by the SDT transducers) are employed using on-chip, microfabricated coil structures. The project explores the nature of frequency-dependent (or 1/f) noise that is intrinsic to SDT devices, and offers an integrated low-power method of noise reduction. SDT technology is at the leading edge of magnetoresistive transducer development due, in part, to the fact that its magnetoresistance can be more than 3 times that of the best giant magnetoresistive devices, and more than 15 times that of the anisotropic magnetoresistive sensors on the market today.