Pressure Sensor Electronics for High Temperature Drilling

Period of Performance: 01/01/2003 - 12/31/2003


Phase 2 SBIR

Recipient Firm

SVT Associates
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator
Firm POC


70291S02-II This project will demonstrate and produce a greatly improved monolithic differential amplifier and switch, based on AlGaN/GaN High Electron Mobility Transistors (HEMTs) and passive components, that will be capable of operating in the high-temperature oil drilling environment. The GaN-based amplifier will have reduced temperature sensitivity at temperatures up to 400¿C. The amplifier will utilize passive devices, such as resistors and capacitors, as well as active devices such as HEMT transistors with improved characteristics. Phase I improved the MBE growth of AlGaN/GaN high electron mobility transistors. High-temperature and high-pressure tests on GaN-based electronic components, including HEMTs and resistors, were performed. The feasibility of employing GaN-based electronics for the construction of high-temperature integrated circuits, such as onboard electronics used in geothermal well drilling and monitoring applications, was demonstrated. Phase II will demonstrate and produce a wide bandgap monolithic instrumentation amplifier and switching circuits that can be used in geothermal drilling and monitoring applications. Commercial Applications and Other Benefits as described by awardee: The high-temperature electronics should have application not only to geothermal and oil drilling but also to avionics, industrial process control, nuclear reactor monitoring, boiler combustion control systems, automotive underhood electronics, and space-based power systems.