Induim Arsenide Antimonide Very Long Wavelength Photodiodes for Near-Room-Temperature Operation

Period of Performance: 01/01/2003 - 12/31/2003

Unknown

Phase 1 SBIR

Recipient Firm

SVT Associates
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator
Firm POC

Abstract

70278S02-II Commercially available photodetectors that operate in the 3-12 micron wavelength range are needed for the Long Wave Infrared (LWIR) monitoring of chemical weapons. However, these photodetectors are susceptible to high degrees of noise, have a low operating bandwidth, and require cryogenic cooling. This project will use indium arsenide antimonide, a compound semiconductor alloy with an energy bandgap suitable for LWIR applications, in the development of a low noise, high bandwidth LWIR photodetector for operation at or near room temperature. In Phase I, a materials growth study demonstrated that a prototype infrared photodetector could provide mid-IR operation at room temperature. The device was determined to be viable and worthy of continued development. Phase II will optimize the photodetector to reduce noise, increase sensitivity, and extend the detected wavelength. After the single-element photodiode is optimized, arrays of infrared photodetectors will be fabricated. Commercial Applications and Other Benefits as described by awardee: Without the need for cryogenic cooling, mid- and long- wavelength IR imaging systems that are smaller, cheaper, more portable could be engineered. These systems can be utilized for astronomy, agricultural and industrial monitoring, night-vision, biomedical imaging, and optical chemical sensing.