Development of Ion Beam Techniques for Layer Splitting of Oxide Materials

Period of Performance: 01/01/2003 - 12/31/2003

$750K

Phase 2 SBIR

Recipient Firm

Ues, Inc.
4401 Dayton-Xenia Road Array
Dayton, OH 45432
Principal Investigator
Firm POC

Abstract

70277S02-II Micro- and optoelectronics, and micro-electro-mechanical systems (MEMS) integration often requires placing thin layers of different materials on a substrate or self-supporting thin layer. This cannot always be achieved by standard thin film deposition processes such as sputtering or pulsed laser deposition because of limitations due to lattice mismatch, interdiffusion, and/or interfacial chemical reaction. This project will develop ion beam techniques for layer splitting and transfer onto a desired substrate for device applications. In Phase I, LiNbO3 and PbZn1/3Nb2/3O3 ¿ PbTiO3 (PZN-PT) layers were separated by implanting MeV He and H ions and either chemical etching or rapid thermal annealing. The mechanism of layer separation was studied using optical and transmission electron microscopic techniques. A monomorph piezo-actuator based on separated PZN-PT film was fabricated and evaluated. Phase II will: (1) optimize the parameters for efficient and cost-effective layer separation of LiNbO3, PZN-PT and PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT), (2) understand the mechanism of layer separation of metal-oxides, (3) develop techniques for bonding the separated layers on silicon and other substrates, and (4) fabricate devices. Commercial Applications and Other Benefits as described by awardee: The technology should enable the integration of photonic circuits and microelectromechanical systems (MEMS) with various devices and materials. New systems applications would take advantage of the chip-level integration of electronic, photonic, and MEMS with integrated multiple functions.