P-Type ZnO

Period of Performance: 01/01/2003 - 12/31/2003


Phase 2 SBIR

Recipient Firm

Structured Materials Industries
201 Circle Drive North Unit # 102
Piscataway, NJ 08854
Principal Investigator
Firm POC


70665S02-II A range of microelectronic devices, including electroluminescent (EL) devices, OLEDs, LEDs, photovoltaics, chemical sensors, and lasers among others, would benefit immediately from a viable p-type transparent conductive oxide. None are routinely available, although there exists limited evidence that they could be made. This project will optimize an existing low-cost, scalable MOCVD (metal oxide chemical vapor deposition) technology to produce p-type transparent conductive oxides of good and repeatable quality, which ultimately would be made routinely available to device producers. In Phase I, MOCVD techniques were applied to produce p-type transparent and conductive oxides. The p-type material was achieved with relatively high conductivity on low-cost substrates. Phase II will further optimize the process for the production of p-type transparent conductive oxides. The applicability of the process to enable new products, specifically blue/UV LEDs, will be demonstrated. Commercial Applications and Other Benefits as described by awardee: New p-type transparent/conductive oxides should enable improved OLED devices; alternative/enhanced EL devices; new photovoltaic devices (solar cells and/or photon detectors); oxide junction based chemical sensors; transparent transistors; and UV LEDs and lasers.