SBIR Phase I: Novel Monolithic Ka to W Band Voltage Controlled Oscillators Using on Chip Varactor Integration

Period of Performance: 01/01/2003 - 12/31/2003

$100K

Phase 1 SBIR

Recipient Firm

TLC Precision Wafer Technology, Inc.
1411 West River Road, North
Minneapolis, MN 55411
Principal Investigator

Abstract

This Small Business Innovation Research Phase I project aims to develop novel, highly integrated, high performance series of high frequency (Ka to W-band) GaAs Monolithic Voltage Controlled Oscillators (VCO) by efficient integration of hyperabrupt varactor diode with the Pseudomorphic High Electron Mobility Transistor (PHEMT) oscillator. This Monolithic Microwave Integrated Circuit (MMIC) will integrate the two exclusive doping profiles needed for the hyperabrupt varactor diode and the PHEMT process. This level of integration will simplify and improve the overall system performance and meet the cost compatibility for reliable commercial production. To date, there is no product in the world market, which is a fully integrated high frequency VCO. Moreover, the MMIC VCOs available so far have very low tuning range (120 MHz) and mediocre phase noise, which does not meet the demands of present day communication systems (tuning range of >500 GHz). This technology will integrate a patented varactor diode with a millimeter wave VCO MMIC design to develop and deliver a family of single chip VCOs with over 1GHz bandwidth, low phase noise of -90dBc/Hz at 100 KHz with > 16dBm output power for frequencies from 20 to 94 GHz.