SBIR Phase I: Integrated Optical Monitor for Hybrid Opto-electronic Transmitter

Period of Performance: 01/01/2003 - 12/31/2003


Phase 1 SBIR

Recipient Firm

Sina Investments
6 Heathrow Court
Marlboro, NJ 07746
Principal Investigator


This Small Business Innovation Research Phase I project describes a hybrid integrated circuit that consists of a vertical cavity surface emitting laser (VCSEL) fabricated on a III-V semiconductor wafer that is flip-chip bonded to a Silicon chip that contains a CMOS circuit used for driving the VCSEL and a Silicon detector that is used for monitoring the output power of the laser. Semiconductor lasers are typically supplied with discrete, external detectors that are used for power monitoring. We propose an integrated detector structure that would provide a simpler, more efficient, and cheaper solution. In this proposal, monitor detectors are designed into the Silicon CMOS laser driver circuits and are flip-chip bonded to the VCSELs creating a compact, three-dimensional circuit structure. This technology provides an optoelectronic-VLSI integrated circuit solution that can be accomplished in large arrays to achieve low cost. The result is wafer-level integration, packaging, and testing of photonic-on-VLSI leading to tremendous manufacturing efficiencies for transceiver modules.