SBIR Phase I: III-V Nitride Structure for Far Infrared Detection

Period of Performance: 01/01/2003 - 12/31/2003


Phase 1 SBIR

Recipient Firm

Gorca Technologies, Inc.
300 West Route 38
Moorestown, NJ 08057
Principal Investigator


This Small Business Innovation Research Phase I will explore new structure designs for low light level far infrared detection. The aim is to develop multi-quantum wells made of III-V nitride semiconductors to achieve operational and cost advantages over existing technologies. During Phase I, the proposed sensor will be designed and fabricated. Far infrared absorption will be demonstrated at low temperatures. In Phase II, sensor design and fabrication conditions will be optimized. The responsivity, uniformity, and dynamic range of detectors will be measured, and prototype far infrared sensors and focal plane arrays will be produced for governmental and commercial evaluations. Successful completion of the project will provide lower-cost sensitive detectors for the far infrared operating at higher temperatures than prior art.