Not Available

Period of Performance: 01/01/2000 - 12/31/2000

$68.8K

Phase 1 SBIR

Recipient Firm

Lancorp. Advanced Systems, Inc.
202 International Drive Pittsburgh International I
Oakdale, PA 15071
Principal Investigator

Abstract

Not Available A new device technology is proposed which exploits an etching technology capable of creating through wafer channels in silicon using a controllable etch process. The deep channel etching can be used to build trench capacitors, transformers, power diodes