Evaluation of Integrated Wall Systems Incorporating Electrochromic Windows

Period of Performance: 01/01/1999 - 12/31/1999


Phase 1 SBIR

Recipient Firm

ONE SAGE WAY, Suite 345
Faribault, MN 55021


Not Available High power microwave and millimeter-wave amplifiers for wireless communication base stations, wireless local area networks, digital radio, and airborne or space-based applications like phased array radar, satellites communications are increasingly utilizing solid state power amplifiers. Nitride based wide bandgap semiconductors have demonstrated potential (theoretically proposed and experimentally demonstrated) for realization of high power, high frequency transistors, due to their superior material properties and the existence of the AlGaN/GaN heterostructure. This is due to the combination of the wide-band gap and heterostructure in the AlGaN/GaN system, where high voltage, high current and low on-resistance can be simultaneously achieved, resulting in high power-high efficiency operation. In this program, WiTech proposes to develop a reliable high power AlGaN/GaN HEMT based microwave/millimeter wave device and circuit technology, capable of operating under harsh environments such as high temperatures up to 300*C. The demonstration vehicle shall be an efficient, linear power amplifier circuit operating at X-band, with ~5 W power level at > 20 Volts (Phase I) and 20-50 W power levels at 28 Volts (Phase II). Operation at 28 Volts eliminates the need for dc-dc voltage conversion in certain airforce applications, improving system efficiency and reducing cost. Further, WiTech will investigate components for GaN MMICs (Metal Resistors, MIM Capacitors, Spiral Inductors, CPW Transmission Line Wiring). Flip-chip technology for thermal management will be addressed in the option plan with a view of achieving higher throughput and lower cost. Power amplifier circuits on SiC and Sapphire substrates will be compared based on a performance/cost analysis in Phase II.