High power SiC transistors for superior X-band radar

Period of Performance: 01/06/2003 - 07/05/2003


Phase 1 SBIR

Recipient Firm

Astralux, Inc.
2500 CENTRAL AVE., # 286
Boulder, CO 80301
Principal Investigator


Astralux, Inc. proposes to develop a new high-power SiC bipolar junction transistor (BJT) operating at ten times higher power density and five times higher efficiency compared to conventional power transistors. This new technology will enable true broadband (3-10GHz) ultra-linear power amplifiers and superior T/R modules for use in radar, satellite communication and other wireless systems. The BJTs will not only outperform existing high-power semiconductor components and vacuum tubes, but also be smaller and more robust. Furthermore, these powerful components will reduce overall systems costs by simplifying the amplifier architecture and facilitating waste heat rejection. The SiC BJT combines high power, high power density, high efficiency, low noise and high linearity, which will result in more powerful, compact, and less costly X-band BMD class radar systems with enhanced resolution and improved discrimination. The ultimate benefit is enhanced national security through early warning, target identification and tracking of hostile targets. SiC BJTs are identified as potential high-power RF devices and would greatly benefit the development of high-power amplifiers and T/R modules.