Design and Fabrication of a Novel SiC Power Device

Period of Performance: 01/08/2001 - 12/14/2001


Phase 1 SBIR

Recipient Firm

United Silicon Carbide, Inc.
7 Deer Park Drive Suite E
Monmouth Junction, NJ 08852
Principal Investigator


We propose to design, fabricate, and commercialize a novel SiC power device for high temperature and high power applications. The proposed device does not reply on a future solution to the problem of gate dielectric reliability at high temperature and electric field. Successful demonstration of the proposed device would rapidly accelerate the development and pratical applications of SiC power devices in harsh environment. In Phase I, we plan to carry out a detailed computer modeling and experimental study (i) to show the expected performance advantages of the proposed SiC power switch over the existing SiC devices, (ii) to simulate both DC and AC performances at temperatures up to 250 C, (iii) to quantify a structure for experimental demonstration, (iv) to experimentally fabricate the proposed power switch, and (v) to fully characterize the device performance. In Phase II, we will further develop the required processing technologies to fabricate improved versions of the proposed device based on improved design and modeling. We will reduce the ON-state voltage drop, increase the blocking voltage, substantially improve the current capability, and clear show the advantages of the proposed SiC power switch over the existing SiC switches.High temperature SiC power switches for ground and sea vehicles, for actuator controllers and power supplies in air platforms, space platforms and weapons systems with extensive commercial applications in traction drives in electric and hybrid electric vehicles, industrial motor drives, power converters, power supplies and appliances.