NOVEL SOURCES FOR TITANIUM NITRIDE CHEMICAL VAPOR DEPOSITION (CVD)

Period of Performance: 01/01/1993 - 12/31/1993

$50K

Phase 1 SBIR

Recipient Firm

Advanced Technologies/laboratories Intl
Advanced Technologies/Lab Intl, 20010 Century Blvd, Ste 500
Germantown, MD 20874
Co-Principal Investigator
Principal Investigator

Abstract

TITANIUM NITRIDE (TIN) IS BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMS, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. THIN FILMS OF TIN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) IS THE MANUFACTURING METHOD OF CHOICE. NO TIN PRECURSORS EXIST THAT ALLOW CVD OF TIN AT LOW TEMPERTUES WITHOUT CONTAMINATION PROBLEM. RESEARCHERS ARE DETERMINING THE FEASIBILITY OF DESIGNING NOVEL UNIMOLECULAR SOURCE REAGENTS THAT ALLOW THE DEPOSITION OF TIN BY CVD AT TEMPERATURES BELOW 500 DEGREES CENTIGRADE WITHOUT CHLORINE, CARBON, OR PARTICULATE CONTAMINATION.