Thin-Film Deposition of Advanced DRAM and FRAM Memory Device Structures

Period of Performance: 05/23/2001 - 01/23/2002


Phase 1 SBIR

Recipient Firm

MicroCoating Technologies (formerly CCVD)
5315 Peachtree Industrial Blvd.
Atlanta, GA 30341
Principal Investigator


Herein we propose to apply the proprietary Combustion CVD (CCVD) process to the manufacture of novel structures for dynamic access memory (DRAM) and nonvolatile, ferroelectric random access memory (FRAM) devices. The CCVD process is a thin-film deposition technique that operates in the open-atmosphere using low-cost equipment and precursors. It has already demonstrated its ability to epitaxially deposit advanced materials of high permittivity (e.g. barium strontium titanate and lead zirconium titanate). These perovskites have the potenitial to allow for high-performance DRAM and FRAM devices. In addition, the non-silicon, single-crystal substrates used in the proposed work provide an innovative technical approach to demonstrate a new type of silicon-on-insulator integrated circuit device. In Phase I, we will optimize CCVD-deposited perovskite thin-films for the envisioned applications. This encompasses a systematic study of deposition parameters and film properties. Multi-layered, epitaxial films will be fabricated and fully tested. This will provide key design parameters and form the fundation for the next generation of DRAM and FRAM devices for both military and civilian applications.A novel structured Giga-bit DRAM with high dielectrics on non-silicon based substrate will enable fast, high density, smaller, more robust, and reliable IC chips. Those advanced DRAM IC could be installed in control systems for a wide variety of applications in aerospace, naval, industrial and civil applications. These devices may provide a new generation of DRAM, which is a promising candidate to realize 0.10 m DRAMs and beyond. This advanced DRAM could also satisfy the requirement of cell capacitance in ever shrinking cell size.