Optimized InGaAsSb/GaAs photodiode for high speed detection

Period of Performance: 05/10/2001 - 11/09/2001

$64.5K

Phase 1 SBIR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator

Abstract

This Small Business Innovation Research Phase I project proposes a new detector material for single mode optical fiber communication over the information highway. High performance detectors are an enabling technology for the moderate to long distance optical transmissions at 1300 and 1550 nm wavelengths. However, due to material related problems, detector devices are not yet practical for such optical network applications. Solving these problems would satisfy the ever-increasing bandwidth and computing-power demands. A new semiconductor of nitrogen-incorporated quaternary III-V semiconductor, InGaAsSbN, can lead to efficient optical detection at the 1300 nm wavelength. Thin film InGaAsSbN will be studied using molecular beam epitaxy technique, where the presence of antimony would result in significant material improvement. Thin film layers Multiple quantum well structures will then be grown on GaAs substrate to demonstrate superior optical characteristics of the material system. Detectors will then be fabricated for performance characterization.High performance detectors would be an important component of systems used in data transmission over optical network, and other optical products such as compact disk read heads, copier print heads, optical scanners, and displays