Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns

Period of Performance: 01/01/2009 - 12/31/2009


Phase 1 SBIR

Recipient Firm

Nlight Photonics
5408 NE 88th Street, Building E
Vancouver, WA 98665
Principal Investigator


While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources typically lack the ultra-narrow (<50 kHz), ultra-stable output spectrum required for use in applications such as Doppler shift measurements of the tropospheric winds. Furthermore, similar sources which operate at 2.0 microns (a preferred wavelength for space-based atmospheric measurements) are simply unavailable. To fill this need, nLight proposes the parallel development of 1.5 and 2.0 micron injection seeding sources based on our well-established, wavelength-scalable, industry-leading InP semiconductor laser design.