Development of Epitaxial GaN Films for RF Communications

Period of Performance: 01/01/2008 - 12/31/2008

$99.9K

Phase 1 SBIR

Recipient Firm

Neocera , LLC
10000 Virginia Manor Road, Suite 300
Beltsville, MD 20705
Principal Investigator
Firm POC

Abstract

The primary objective of this SBIR is to develop epitaxial GaN films with threading dislocation density less than 10^6 cm^-2. We propose an innovative approach combining two Pulsed Energy technologies: plasma-energy-controlled Pulsed Laser Deposition (PLD) to deposit high quality epitaxial GaN films, and in situ Pulsed Energy Annealing to decrease the dislocation density ( to