Ge Quantum Dot Infrared Imaging Camera

Period of Performance: 01/01/2008 - 12/31/2008


Phase 1 SBIR

Recipient Firm

Luna Innovations, Inc.
301 1st St Suite 200
Roanoke, VA 24011
Principal Investigator
Firm POC


Luna Innovations Incorporated proposes to develop a high performance Ge quantum dots-based infrared (IR) imaging camera on Si substrate. The high sensitivity, large format imaging camera with a spectral response in the 1-4um region is extremely important for many NASA space and Earth programs. Luna's approach will allow significant reduction in price of the infrared imaging camera, increase pixel count and radiation hardness, reduction of dark current, increase of operation temperature while keeping all other performance metrics competitive with current state of the art technologies. Furthermore, Si substrates is very attractive in IR FPA technology, not only because it is less expensive and available in large area wafers but also because the coupling of the Si substrates with Si readout circuitry in an FPA structure allows fabrication of very large arrays exhibiting long-term thermal cycle reliability.