Single Photon Sensitive HgCdTe Avalanche Photodiode Detector (APD)

Period of Performance: 01/01/2007 - 12/31/2007

$100K

Phase 1 SBIR

Recipient Firm

Voxtel, Inc.
15985 NW Schendel Ave. Suite 200
Beaverton, OR 97006
Principal Investigator
Firm POC

Abstract

A linear mode HgCdT electron-initiated avalanche photodiode (EAPD) capable of 1570nm photon detection efficiency (PDE) at >10 MHz will be developed. The Phase I design, is based on vertical-charge-transport HgCdTe EAPDs recently fabricated using a 3.8-micron wavelength cutoff HgCdTe alloys, which showed excellent 1570nm response, nearly noiseless gain, >650, and GHz bandwidth operation at thermoelectric temperatures.