High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N

Period of Performance: 01/01/2004 - 12/31/2004

$600K

Phase 2 SBIR

Recipient Firm

SVT Associates
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator
Firm POC

Abstract

Electronics circuits that can function in very high temperatures (> 450?C) are needed for a number of applications including automotive and turbine engine control, industrial high-temperature processing, geothermal and deep-well oil drilling, satellite power management systems, and future planetary missions to Venus and Mercury. The key electronic components for these applications include 1) an instrumentation amplifier to be used in conjunction with different probes and transducers, and 2) a power amplifier for driving motors and actuators. We propose to develop AlGaN-based electronics grown on low-defect substrates for operations at temperatures > 450?C and pressures > 100 atmospheres.