Antimonide-based, High-speed, Low-power, Heterojunction Bipolar Transistor

Period of Performance: 05/08/2001 - 11/07/2001

$65K

Phase 1 SBIR

Recipient Firm

Structured Materials Industries
201 Circle Drive North Unit # 102
Piscataway, NJ 08854
Principal Investigator

Abstract

Structured Materials Industries (SMI) proposes the development of antimonide-based, high-speed, low-power, heterojunction bipolar transistors (HBTs). These HBTs will have advantages over other compound semiconductor HBTs including lower power consumption and zero turn on voltage. They are also required for the fabrication of all antimonide-based circuits integrating recent advances on optoelectronic antimonide-based devices. SMI will work closely with Sarnoff Corporation on this project. Sarnoff has extensive experience in the growth and fabrication of antimonide based detectors, lasers, and thermophotovoltaic (TPV) devices. SMI/Sarnoff recently demonstrated a high-efficiency 2.4 micron InGaAsSb TPV cell with internal quantum efficiencies over 90% at a peak wavelength of 2.0 microns. This technology is transferable to the fabrication of antimonide-based HBTs. In the Phase I program, we will explore the most promising structure for a high-efficiency, large bandwidth HBT, building upon our existing InGaAsSb materials experience. The optimum material compositions and device design will be determined and proof-of-principle devices will be fabricated. In the Phase II program the semi-insulating substrate required to accurately measure high-speed operation will be developed. The antimonide-based HBTs will be optimized and demonstration circuits using the devices will be fabricated.These HBTs will have advantages over other compound semiconductor HBTs including lower power consumption and zero turn on voltage. They are also required for the fabrication of all antimonide-based circuits integrating recent advances on optoelectronic antimonide-based devices.