Monolithic, Optically Resonant, Infrared Detector Arrays Using Indium-Gallium-Arsenide on Silicon

Period of Performance: 01/01/1995 - 12/31/1995


Phase 2 SBIR

Recipient Firm

Discovery Semiconductors, Inc.
Ewing, NJ 08628
Principal Investigator


We propose to develop 5 element, linear, monolithic, InGaAs-on-Silicon, spectrally selective detector arrays for the near-infrared spectrum (1.0 - 1.7 um). The technique of selective epitaxy will be used to grow (100x100) um area detector mesas on the silicon substrate. Special methods will be used to practically eliminate the misfit dislocations caused by the severe lattice mismatch between the InO Ga 47As absorption region and the silicon substrate, thus, resulting in a very high quality detector material. The expected room temperature leakage current is less than 10 nA at a reverse bias of 5V. The innovation consists of a new, unique, optically resonant InO.53GaO.47As detector that has a wavelength selective response. This resonant detector not only discriminates different wavelengths in a compact and solid state design, but also has the extended wavelength coverage and improved quantum efficiency over conventional photodetector designs. In addition, the silicon substrate will incorporate low readout noise circuitry using standard CMOS process. These features will represent a major advance in infrared detector array technology.