NOVEL PROCESS FOR THE THIN FILM GROWTH OF YBA2CU3O7

Period of Performance: 01/01/1991 - 12/31/1991

$500K

Phase 2 SBIR

Recipient Firm

Advanced Technologies/laboratories Intl
Advanced Technologies/Lab Intl, 20010 Century Blvd, Ste 500
Germantown, MD 20874
Firm POC
Principal Investigator

Abstract

REALIZATION OF THE PERFORMANCE ADVANTAGES OF SUPERCONDUCTING DEVICES IN HIGH FREQUENCY COMMUNICATIONS DEPENDS ON DEVELOPMENT OF A LOW TEMPERATURE DEPOSITION PROCESS WITH EXACTING CONTROL OF STOICHIOMETRY AND MORPHOLOGY. MOCVD CAN MEET THESE NEEDS COUPLED WITH EASE OFSCALE-UP. HOWEVER, RECENT WORK AT ADVANCED TECHNOLOGY MATERIALS, INC. SHOWS THAT YBACUO AND BISRCACUO FILMS GROWN BY MOCVD AT TEMPERATURES LESS THAN 800 DEGREES CENTIGRADE ARE AMORPHOUS MIXTURES OF OXIDES, WITH CAULIFLOWER-LIKE MORPHOLOGY INDICATIVE OF LOW SURFACE MOBILITY GROWTH. SURFACE MOBILITIES CAN BE ENHANCED THROUGH THE USE OF A PLASMA. MOREOVER, PLASMA ASSISTED LASER ABLATION, SPUTTERING AND REACTIVE EVAPORATION HAVE ALREADY BEEN UTILIZED FOR THE IN-SITU GROWTH OF SUPERCONDUCTING THIN FILMS AT 400-600 DEGREES CENTIGRADE. AT 600 DEGREES CENTIGRADE, A 50 EV OXYGEN ION BEAM OXIDIZED BAF2 TO BAO, WHICH SUGGESTS THAT PLASMA ENHANCED-CVD WILL EFFECT THE IN-SITU GROWTH OF SUPERCONDUCTING THIN FILMS WITH THE EXISTING REAGENTS AT 600 DEGREES CENTIGRADE OR BELOW. PHASE I WILL DEMONSTRATE THE GROWTH OF IN-SITU SUPERCONDUCTING THIN FILMS BY PECVD. PHASE II WILL FOCUS ONPROCESS OPTIMIZATION THRU THE CORRELATION OF PLASMA PROPERTIES DETERMINED BY IN-SITU DIAGNOSTICS WITH THE HTSC THIN FILM CHARACTERIZATION DATA. THIS WILL ALLOW A PHASE III SCALE-UP OF THE PECVD PROCESS TO MULTIWAFER PRODUCTION.